FD200R12KE3HOSA1
manufacturer:
Infineon Technologies
Description:
IGBT MODULE 1200V 1050W
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
IGBTs
IGBT Modules
Current - Collector Cutoff (Max):
5 MA
Product Status:
Active
Mounting Type:
Chassis Mount
Package:
Tray
Series:
C
Vce(on) (Max) @ Vge, Ic:
2.15V @ 15V, 200A
Voltage - Collector Emitter Breakdown (Max):
1200 V
Supplier Device Package:
Module
Mfr:
Infineon Technologies
Operating Temperature:
-40°C ~ 125°C
Power - Max:
1050 W
IGBT Type:
Trench Field Stop
Package / Case:
Module
Input:
Standard
Input Capacitance (Cies) @ Vce:
14 NF @ 25 V
Configuration:
Single Chopper
NTC Thermistor:
No
Base Product Number:
FD200R12
Introduction
IGBT Module Trench Field Stop Single Chopper 1200 V 1050 W Chassis Mount Module
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