DF200R12W1H3B27BOMA1
manufacturer:
Infineon Technologies
Description:
IGBT MOD 1200V 30A 375W
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
IGBTs
IGBT Modules
Current - Collector (Ic) (Max):
30 A
Product Status:
Active
Mounting Type:
Chassis Mount
Package:
Tray
Series:
-
Package / Case:
Module
Vce(on) (Max) @ Vge, Ic:
1.3V @ 15V, 30A
Voltage - Collector Emitter Breakdown (Max):
1200 V
Supplier Device Package:
Module
Mfr:
Infineon Technologies
Operating Temperature:
-40°C ~ 150°C
Current - Collector Cutoff (Max):
1 MA
IGBT Type:
-
Power - Max:
375 W
Input:
Standard
Input Capacitance (Cies) @ Vce:
2 NF @ 25 V
Configuration:
2 Independent
NTC Thermistor:
Yes
Base Product Number:
DF200R12
Introduction
IGBT Module 2 Independent 1200 V 30 A 375 W Chassis Mount Module
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