F3L25R12W1T4B27BOMA1
manufacturer:
Infineon Technologies
Description:
MODULE IGBT 1200V EASY1B-2
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
IGBTs
IGBT Modules
Current - Collector (Ic) (Max):
45 A
Product Status:
Active
Mounting Type:
Chassis Mount
Package:
Tray
Series:
-
Package / Case:
Module
Vce(on) (Max) @ Vge, Ic:
2.25V @ 15V, 25A
Voltage - Collector Emitter Breakdown (Max):
1200 V
Supplier Device Package:
AG-EASY1B
Mfr:
Infineon Technologies
Operating Temperature:
-40°C ~ 150°C (TJ)
Current - Collector Cutoff (Max):
1 MA
IGBT Type:
-
Power - Max:
215 W
Input:
Standard
Input Capacitance (Cies) @ Vce:
1.45 NF @ 25 V
Configuration:
Half Bridge
NTC Thermistor:
Yes
Base Product Number:
F3L25R12
Introduction
IGBT Module Half Bridge 1200 V 45 A 215 W Chassis Mount AG-EASY1B
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