MG35P12E1A
manufacturer:
Yangjie Technology
Description:
Transistors - IGBTs - Modules E1
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
IGBTs
IGBT Modules
Current - Collector (Ic) (Max):
35 A
Product Status:
Active
Mounting Type:
Chassis Mount
Package:
Bulk
Series:
-
Package / Case:
Module
Vce(on) (Max) @ Vge, Ic:
2.3V @ 15V, 25A
Voltage - Collector Emitter Breakdown (Max):
1200 V
Supplier Device Package:
-
Mfr:
Yangjie Technology
Operating Temperature:
-40°C ~ 150°C (TJ)
Current - Collector Cutoff (Max):
1 MA
IGBT Type:
-
Power - Max:
166 W
Input:
Three Phase Bridge Rectifier
Input Capacitance (Cies) @ Vce:
1.6 NF @ 25 V
Configuration:
Three Phase Inverter With Brake
NTC Thermistor:
Yes
Introduction
IGBT Module Three Phase Inverter with Brake 1200 V 35 A 166 W Chassis Mount
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