FF150R12ME3GBOSA1
manufacturer:
Infineon Technologies
Description:
IGBT MOD 1200V 200A 695W
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
IGBTs
IGBT Modules
Current - Collector (Ic) (Max):
200 A
Product Status:
Not For New Designs
Mounting Type:
Chassis Mount
Package:
Tray
Series:
EconoDUAL™
Package / Case:
Module
Vce(on) (Max) @ Vge, Ic:
2.15V @ 15V, 150A
Voltage - Collector Emitter Breakdown (Max):
1200 V
Supplier Device Package:
Module
Mfr:
Infineon Technologies
Operating Temperature:
-40°C ~ 125°C
Current - Collector Cutoff (Max):
5 MA
IGBT Type:
Trench Field Stop
Power - Max:
695 W
Input:
Standard
Input Capacitance (Cies) @ Vce:
10.5 NF @ 25 V
Configuration:
Half Bridge
NTC Thermistor:
Yes
Base Product Number:
FF150R12M
Introduction
IGBT Module Trench Field Stop Half Bridge 1200 V 200 A 695 W Chassis Mount Module
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