Send Message
Home > products > Discrete Semiconductor Products > FS200R12KT4RB11BOSA1

FS200R12KT4RB11BOSA1

manufacturer:
Infineon Technologies
Description:
IGBT MOD 1200V 280A 1000W
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products Transistors IGBTs IGBT Modules
Current - Collector (Ic) (Max):
280 A
Product Status:
Active
Mounting Type:
Chassis Mount
Package:
Tray
Series:
-
Package / Case:
Module
Vce(on) (Max) @ Vge, Ic:
2.15V @ 15V, 200A
Voltage - Collector Emitter Breakdown (Max):
1200 V
Supplier Device Package:
Module
Mfr:
Infineon Technologies
Operating Temperature:
-40°C ~ 150°C
Current - Collector Cutoff (Max):
1 MA
IGBT Type:
-
Power - Max:
1000 W
Input:
Standard
Input Capacitance (Cies) @ Vce:
14 NF @ 25 V
Configuration:
Three Phase Inverter
NTC Thermistor:
Yes
Base Product Number:
FS200R12
Introduction
IGBT Module Three Phase Inverter 1200 V 280 A 1000 W Chassis Mount Module
Send RFQ
Stock:
MOQ: