NXH35C120L2C2ESG
manufacturer:
onsemi
Description:
IGBT MODULE, CIB 1200 V, 35 A IG
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
IGBTs
IGBT Modules
Current - Collector (Ic) (Max):
35 A
Product Status:
Active
Mounting Type:
Through Hole
Package:
Tube
Series:
-
Package / Case:
26-PowerDIP Module (1.199", 47.20mm)
Vce(on) (Max) @ Vge, Ic:
2.4V @ 15V, 35A
Voltage - Collector Emitter Breakdown (Max):
1200 V
Supplier Device Package:
26-DIP
Mfr:
Onsemi
Operating Temperature:
-40°C ~ 150°C (TJ)
Current - Collector Cutoff (Max):
250 µA
IGBT Type:
-
Power - Max:
20 MW
Input:
Three Phase Bridge Rectifier
Input Capacitance (Cies) @ Vce:
8.333 NF @ 20 V
Configuration:
Three Phase Inverter With Brake
NTC Thermistor:
Yes
Base Product Number:
NXH35
Introduction
IGBT Module Three Phase Inverter with Brake 1200 V 35 A 20 mW Through Hole 26-DIP
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|---|---|---|---|
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FP7G50US60 |
IGBT MODULE 600V 50A 250W EPM7
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