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Home > products > Discrete Semiconductor Products > FS100R07N2E4B11BOSA1

FS100R07N2E4B11BOSA1

manufacturer:
Infineon Technologies
Description:
IGBT MOD 650V 125A 20MW
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products Transistors IGBTs IGBT Modules
Current - Collector (Ic) (Max):
125 A
Product Status:
Discontinued At Digi-Key
Mounting Type:
Chassis Mount
Package:
Bulk
Series:
EconoPACK™ 2
Package / Case:
Module
Vce(on) (Max) @ Vge, Ic:
1.95V @ 15V, 100A
Voltage - Collector Emitter Breakdown (Max):
650 V
Supplier Device Package:
Module
Mfr:
Infineon Technologies
Operating Temperature:
-40°C ~ 150°C
Current - Collector Cutoff (Max):
1 MA
IGBT Type:
Trench Field Stop
Power - Max:
20 MW
Input:
Standard
Input Capacitance (Cies) @ Vce:
6.2 NF @ 25 V
Configuration:
Three Phase Inverter
NTC Thermistor:
Yes
Base Product Number:
FS100R07
Introduction
IGBT Module Trench Field Stop Three Phase Inverter 650 V 125 A 20 mW Chassis Mount Module
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