VS-GT200TS065N
manufacturer:
Vishay General Semiconductor - Diodes Division
Description:
MODULES IGBT - IAP IGBT
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
IGBTs
IGBT Modules
Current - Collector (Ic) (Max):
193 A
Product Status:
Active
Mounting Type:
Chassis Mount
Package:
Box
Series:
FRED Pt®
Package / Case:
Module
Vce(on) (Max) @ Vge, Ic:
2.3V @ 15V, 200A
Voltage - Collector Emitter Breakdown (Max):
650 V
Supplier Device Package:
INT-A-PAK IGBT
Mfr:
Vishay General Semiconductor - Diodes Division
Current - Collector Cutoff (Max):
100 µA
IGBT Type:
Trench
Power - Max:
517 W
Input:
Standard
Operating Temperature:
-40°C ~ 175°C (TJ)
Configuration:
Half Bridge Inverter
NTC Thermistor:
No
Introduction
IGBT Module Trench Half Bridge Inverter 650 V 193 A 517 W Chassis Mount INT-A-PAK IGBT
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