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Home > products > Discrete Semiconductor Products > FS50R12W2T4B11BOMA1

FS50R12W2T4B11BOMA1

manufacturer:
Infineon Technologies
Description:
IGBT MOD 1200V 83A 335W
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products Transistors IGBTs IGBT Modules
Current - Collector (Ic) (Max):
83 A
Product Status:
Active
Mounting Type:
Chassis Mount
Package:
Tray
Series:
EasyPACK™
Package / Case:
Module
Vce(on) (Max) @ Vge, Ic:
2.15V @ 15V, 50A
Voltage - Collector Emitter Breakdown (Max):
1200 V
Supplier Device Package:
Module
Mfr:
Infineon Technologies
Operating Temperature:
-40°C ~ 150°C
Current - Collector Cutoff (Max):
1 MA
IGBT Type:
Trench Field Stop
Power - Max:
335 W
Input:
Standard
Input Capacitance (Cies) @ Vce:
2.8 NF @ 25 V
Configuration:
Three Phase Inverter
NTC Thermistor:
Yes
Base Product Number:
FS50R12
Introduction
IGBT Module Trench Field Stop Three Phase Inverter 1200 V 83 A 335 W Chassis Mount Module
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