VS-GT80DA120U
manufacturer:
Vishay General Semiconductor - Diodes Division
Description:
IGBT MOD 1200V 139A 658W SOT227
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
IGBTs
IGBT Modules
Current - Collector (Ic) (Max):
139 A
Product Status:
Active
Mounting Type:
Chassis Mount
Package:
Bulk
Series:
HEXFRED®
Package / Case:
SOT-227-4, MiniBLOC
Vce(on) (Max) @ Vge, Ic:
2.55V @ 15V, 80A
Voltage - Collector Emitter Breakdown (Max):
1200 V
Supplier Device Package:
SOT-227
Mfr:
Vishay General Semiconductor - Diodes Division
Operating Temperature:
-40°C ~ 150°C (TJ)
Current - Collector Cutoff (Max):
100 µA
IGBT Type:
Trench
Power - Max:
658 W
Input:
Standard
Input Capacitance (Cies) @ Vce:
4.4 NF @ 25 V
Configuration:
Single
NTC Thermistor:
No
Base Product Number:
GT80
Introduction
IGBT Module Trench Single 1200 V 139 A 658 W Chassis Mount SOT-227
Send RFQ
Stock:
MOQ: